Get Charge-Trapping Non-Volatile Memories: Volume 1 – Basic and PDF

February 2, 2018 | Algorithms | By admin | 0 Comments

By Panagiotis Dimitrakis

ISBN-10: 3319152890

ISBN-13: 9783319152899

ISBN-10: 3319152904

ISBN-13: 9783319152905

This ebook describes the fundamental applied sciences and operation rules of charge-trapping non-volatile thoughts. The authors clarify the equipment physics of every equipment structure and supply a concrete description of the fabrics concerned in addition to the elemental houses of the know-how. sleek fabric homes used as charge-trapping layers, for brand new purposes are introduced.

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Extra info for Charge-Trapping Non-Volatile Memories: Volume 1 – Basic and Advanced Devices

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2007). The new CTM cell architecture is shown in Fig. 22c and the related energy band diagram is presented in Fig. 22d. The main advantage of BE-SONOS devices is the enhanced injection of hole charges. From the manufacturing point of view, CTMs have a better scalability than Flash. The SONOS-like device provides very low power cell and can be used in either a moderate density NOR architecture with isolated source lines or a highdensity, multi-byte, NAND architecture. A unique feature of SONOS lies in their radiation hardness for military and space applications (White 2000, 2006).

1. The coupling to the floating gate is typically expressed as a coupling coefficient given by: Cn /n ¼ Xi¼n 1 Ci ð2:1Þ The floating gate voltage is given by: V fg ¼ i¼n X /i V i ð2:2Þ 1 The FG potential is dependent on the voltage applied to a given coupling capacitance and the ratio (α) of the given capacitance to the total capacitance from all sources. A large voltage and a large ratio results in a larger voltage coupled on to the FG. 1 Key NAND historical milestones Year 1967 Inventor and company Kahng et al.

9 Planar floating gate options showing the control gate (CG), blocking dielectric (BD), trapping layer (nitride, nanodots, and a thin floating gate), and tunnel oxide various alternative approaches and discusses the planar cell technology that successfully overcame these issues to enable mass production of a scaled 16 and 20 nm cell. One key advantage of a planar cell is some relief from the floating gate to floating gate interference as shown in Fig. 8 simply because the planar cell is thin reducing the capacitance.

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Charge-Trapping Non-Volatile Memories: Volume 1 – Basic and Advanced Devices by Panagiotis Dimitrakis


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