Get Charge-Trapping Non-Volatile Memories: Volume 1 – Basic and PDF

February 2, 2018 | Algorithms | By admin | 0 Comments

By Panagiotis Dimitrakis

ISBN-10: 3319152890

ISBN-13: 9783319152899

ISBN-10: 3319152904

ISBN-13: 9783319152905

This ebook describes the fundamental applied sciences and operation rules of charge-trapping non-volatile thoughts. The authors clarify the equipment physics of every equipment structure and supply a concrete description of the fabrics concerned in addition to the elemental houses of the know-how. sleek fabric homes used as charge-trapping layers, for brand new purposes are introduced.

Show description

Read Online or Download Charge-Trapping Non-Volatile Memories: Volume 1 – Basic and Advanced Devices PDF

Similar algorithms books

Download e-book for iPad: Algorithms and Complexity: 4th Italian Conference, CIAC 2000 by Giorgio Ausiello, Stefano Leonardi, Alberto

The papers during this quantity have been offered on the Fourth Italian convention on Algorithms and Complexity (CIAC 2000). The convention came about on March 1-3, 2000, in Rome (Italy), on the convention middle of the collage of Rome \La Sapienza". This convention was once born in 1990 as a countrywide assembly to be held each 3 years for Italian researchers in algorithms, information buildings, complexity, and parallel and disbursed computing.

Read e-book online Computational Biomechanics for Medicine: Models, Algorithms PDF

One of many maximum demanding situations for mechanical engineers is to increase the luck of computational mechanics to fields outdoor conventional engineering, particularly to biology, biomedical sciences, and medication. This booklet is a chance for computational biomechanics experts to provide and trade reviews at the possibilities of using their options to computer-integrated medication.

Graph Data Model: and Its Data Language by Hideko S. Kunii (auth.) PDF

Advanced databases will be understood good with visible illustration. A graph is a really intuitive and rational constitution to visually characterize such databases. Graph information version (GDM) proposed by way of the writer formalizes facts illustration and operations at the information when it comes to the graph notion. The GDM is an extension of the relational version towards structural illustration.

Download PDF by Xian-he Sun, Wenyu Qu, Ivan Stojmenovic, Wanlei Zhou,: Algorithms and Architectures for Parallel Processing: 14th

This quantity set LNCS 8630 and 8631 constitutes the complaints of the 14th overseas convention on Algorithms and Architectures for Parallel Processing, ICA3PP 2014, held in Dalian, China, in August 2014. The 70 revised papers awarded within the volumes have been chosen from 285 submissions. the 1st quantity includes chosen papers of the most convention and papers of the first foreign Workshop on rising themes in instant and cellular Computing, ETWMC 2014, the fifth overseas Workshop on clever verbal exchange Networks, IntelNet 2014, and the fifth foreign Workshop on instant Networks and Multimedia, WNM 2014.

Extra info for Charge-Trapping Non-Volatile Memories: Volume 1 – Basic and Advanced Devices

Sample text

2007). The new CTM cell architecture is shown in Fig. 22c and the related energy band diagram is presented in Fig. 22d. The main advantage of BE-SONOS devices is the enhanced injection of hole charges. From the manufacturing point of view, CTMs have a better scalability than Flash. The SONOS-like device provides very low power cell and can be used in either a moderate density NOR architecture with isolated source lines or a highdensity, multi-byte, NAND architecture. A unique feature of SONOS lies in their radiation hardness for military and space applications (White 2000, 2006).

1. The coupling to the floating gate is typically expressed as a coupling coefficient given by: Cn /n ¼ Xi¼n 1 Ci ð2:1Þ The floating gate voltage is given by: V fg ¼ i¼n X /i V i ð2:2Þ 1 The FG potential is dependent on the voltage applied to a given coupling capacitance and the ratio (α) of the given capacitance to the total capacitance from all sources. A large voltage and a large ratio results in a larger voltage coupled on to the FG. 1 Key NAND historical milestones Year 1967 Inventor and company Kahng et al.

9 Planar floating gate options showing the control gate (CG), blocking dielectric (BD), trapping layer (nitride, nanodots, and a thin floating gate), and tunnel oxide various alternative approaches and discusses the planar cell technology that successfully overcame these issues to enable mass production of a scaled 16 and 20 nm cell. One key advantage of a planar cell is some relief from the floating gate to floating gate interference as shown in Fig. 8 simply because the planar cell is thin reducing the capacitance.

Download PDF sample

Charge-Trapping Non-Volatile Memories: Volume 1 – Basic and Advanced Devices by Panagiotis Dimitrakis

by Robert

Rated 4.84 of 5 – based on 34 votes